Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films

Trappen, Robbyn; Garcia-Castro, A. C.; Tra, Vu Thanh; Huang, Chih-Yeh; Ibarra-Hernandez, Wilfredo; Fitch, James; Singh, Sobhit; Zhou, Jinling; Cabrera, Guerau; Chu, Ying-Hao; LeBeau, James M.; Romero, Aldo H.; Holcomb, Mikel B.

doi:10.1038/s41598-018-32701-x

Title: Electrostatic potential and valence modulation in La_0.7Sr_0.3MnO₃ thin films

Journal Article · Tue Sep 25 00:00:00 EDT 2018 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-018-32701-x· OSTI ID:1499989

^[1]; Garcia-Castro, A. C. ^[2]; Tra, Vu Thanh ^[3]; Huang, Chih-Yeh ^[4]; Ibarra-Hernandez, Wilfredo ^[5]; Fitch, James ^[6];

^[1]; Zhou, Jinling ^[1]; Cabrera, Guerau ^[1]; Chu, Ying-Hao ^[3]; LeBeau, James M. ^[6];

^[5];

^[1]

West Virginia Univ., Morgantown, WV (United States). Dept. of Physics and Astronomy
West Virginia Univ., Morgantown, WV (United States). Dept. of Physics and Astronomy; Univ. of Liège (Belgium). Theoretical Physics of Materials; Industrial Univ. of Santander, Bucaramanga (Colombia). Dept. of Physics
National Chiao Tung Univ., Hsinchu (Taiwan). Inst. of Physics
West Virginia Univ., Morgantown, WV (United States). Dept. of Mechanical & Aerospace Engineering
West Virginia Univ., Morgantown, WV (United States). Dept. of Physics and Astronomy; Meritorious Autonomous Univ. of Puebla (BUAP) (Mexico). Faculty of Engineering
North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering

The Mn valence in thin film La_0.7Sr_0.3MnO₃ was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn^3.7+, whereas the interface valence reduces down to Mn^2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.

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Research Organization:: West Virginia Univ., Morgantown, WV (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0016176; AC02-05CH11231; DMR-1608656; ACI-1053575; DMREF-NSF 1434897

OSTI ID:: 1499989

Journal Information:: Scientific Reports, Vol. 8; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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Effect of oxygen stoichiometry on the magnetization profiles and negative magnetization in LSMO thin films Trappen, Robbyn; Grutter, Alexander J.; Huang, Chih-Yeh Journal of Applied Physics, Vol. 126, Issue 10 https://doi.org/10.1063/1.5111858	journal	September 2019

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Title: Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films

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