Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass

Li, Rui; Li, Guangyuan; Hong, Wen -Chiang; Reyes, Pavel I.; Tang, Ke; Yang, Keyang; Wang, Szu -Ying; Ye, Hongfei; Li, Yuxuan; Zhang, Lihua; Kisslinger, Kim; Lu, Yicheng

doi:10.1088/1361-665X/aad006

Title: Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass

Journal Article · Wed Jul 25 00:00:00 EDT 2018 · Smart Materials and Structures

DOI:https://doi.org/10.1088/1361-665X/aad006· OSTI ID:1495008

^[1]; Li, Guangyuan ^[1]; Hong, Wen -Chiang ^[1]; Reyes, Pavel I. ^[1]; Tang, Ke ^[2]; Yang, Keyang ^[1]; Wang, Szu -Ying ^[1]; Ye, Hongfei ^[1]; Li, Yuxuan ^[1]; Zhang, Lihua ^[3]; Kisslinger, Kim ^[3]; Lu, Yicheng ^[1]

Rutgers Univ., Piscataway, NJ (United States)
Shanghai Univ., Shanghai (People's Republic of China)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Tunable surface acoustic wave (SAW) devices have attracted considerable interests due to its applications in emerging fields, such as secured wireless communication, adaptive signal processing, and smart sensing systems. We report a dual-input-voltage-controlled tunable SAW built on glass, which uses a ZnO-based dual-layer structure consisting of a piezoelectric Ni- doped ZnO (NZO) and semiconducting Mg-doped ZnO (MZO). The interdigital (IDT) electrodes are buried in the piezoelectric NZO layer to form the delay line for SAW propagation, while the semiconductor MZO layer serves as the channel of a thin film transistor (TFT) to modulate the conductivity. Results show the interface between MZO channel and SiO₂ gate dielectric layer of the TFTT significantly impacts on SAW tuning performances due to Zn diffusion from MZO into SiO₂. The TFT-SAW device using an ultra-thin MgO layer as interface modification enables SAW frequency tuning of 0.53% under solely V _gs control with 0–12 V. The required voltage range is significantly reduced compared regular MZO-NZO TFT-SAW counterpart (Δf/f_c ~ 0.25%; V _gs –30 to –14 V) without interface modification. With additional control of V _ds, the SAW frequency tunability is further expanded from 0.46% to 0.63%. As a result, this dual-input voltage-controlled frequency tuning device on glass is promising for low-voltage, low-cost portable smart sensors and voltage-controlled reconfigurable radio-frequency identification tags.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1495008

Report Number(s):: BNL-211274-2019-JAAM

Journal Information:: Smart Materials and Structures, Vol. 27, Issue 8; ISSN 0964-1726

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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