Edge effect pinning in mesoscopic superconducting strips with non-uniform distribution of defects

Kimmel, Gregory J.; Glatz, Andreas; Vinokur, Valerii M.; Sadovskyy, Ivan A.

doi:10.1038/s41598-018-36285-4

Title: Edge effect pinning in mesoscopic superconducting strips with non-uniform distribution of defects

Journal Article · Fri Jan 18 00:00:00 EST 2019 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-018-36285-4· OSTI ID:1493704

Kimmel, Gregory J. ^[1];

^[2];

^[3]; Sadovskyy, Ivan A. ^[4]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Dept. of Engineering Sciences and Applied Mathematics
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northern Illinois Univ., DeKalb, IL (United States). Dept. of Physics
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Chicago, IL (United States). Computation Inst.

Transport characteristics of nano-sized superconducting strips and bridges are determined by an intricate interplay of surface and bulk pinning. In the limiting case of a very narrow bridge, the critical current is mostly defined by its surface barrier, while in the opposite case of very wide strips it is dominated by its bulk pinning properties. Here we present a detailed study of the intermediate regime, where the critical current is determined, both, by randomly placed pinning centres and by the Bean-Livingston barrier at the edge of the superconducting strip in an external magnetic field. We use the time-dependent Ginzburg-Landau equations to describe the vortex dynamics and current distribution in the critical regime. Our studies reveal that while the bulk defects arrest vortex motion away from the edges, defects in their close vicinity promote vortex penetration, thus suppressing the critical current. We determine the spatial distribution of the defects optimizing the critical current and find that it is in general non-uniform and asymmetric: the barrier at the vortex-exit edge influence the critical current much stronger than the vortex-entrance edge. Furthermore, this optimized defect distribution has a more than 30% higher critical current density than a homogeneously disorder superconducting film.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR). Scientific Discovery through Advanced Computing (SciDAC)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1493704

Journal Information:: Scientific Reports, Vol. 9, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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The Quest for High Critical Current in Applied High-Temperature Superconductors Glatz, Andreas; Sadovskyy, Ivan A.; Welp, Ulrich Journal of Superconductivity and Novel Magnetism, Vol. 33, Issue 1 https://doi.org/10.1007/s10948-019-05255-w	journal	September 2019
Interplay between the quantum interference and current localization phenomena in superconductor non-ideal mesoscopic rings Papari, G. P.; Fomin, V. M. Superconductor Science and Technology, Vol. 32, Issue 10 https://doi.org/10.1088/1361-6668/ab315f	journal	August 2019
The quest for high critical current in applied high-temperature superconductors Glatz, Andreas; Sadovskyy, Ivan A.; Welp, Ulrich arXiv https://doi.org/10.48550/arxiv.1911.02500	text	January 2019
Shear Banding, Intermittency, Jamming and Dynamic Phases for Skyrmions in Inhomogeneous Pinning Arrays Reichhardt, C.; Reichhardt, C. J. O. arXiv https://doi.org/10.48550/arxiv.1911.06719	text	January 2019

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