High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

Liu, Richard; Schaller, Richard; Chen, Chang Qiang; Bayram, Can

doi:10.1021/acsphotonics.7b01231

Title: High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

Journal Article · Mon Jan 08 00:00:00 EST 2018 · ACS Photonics

DOI:https://doi.org/10.1021/acsphotonics.7b01231· OSTI ID:1489243

^[1];

^[2]; Chen, Chang Qiang ^[3];

^[1]

Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States); Micro and Nanotechnology Technology Lab., Urbana, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Univ. of Illinois at Urbana−Champaign, Urbana, IL (United States)

Ultraviolet emission characteristics of cubic (c-) GaN enabled through hexagonal-to-cubic phase transition are reported. Substrate patterning and material growth are shown to affect phase purity and emission characteristics of c-GaN as studied by electron backscatter diffraction, and photo- and cathodoluminescence, respectively. Raman study shows a tensile strain in the c-GaN. Time-resolved photoluminescence reveals c-GaN band edge emission decay time of 11 ps. The ultraviolet emissions from both phases of GaN are linearly polarized in the same direction, which is along the < 11$$ \overline{20}\ $$ > and < 110 > directions of hexagonal GaN and c-GaN, respectively. Temperature-dependent (5.7 to 280 K) cathodoluminescence studies reveal an internal quantum efficiency of ~29% at room temperature along with intrinsic and extrinsic defect energy levels of ~124 and ~344 meV, respectively, of the phase-transition c-GaN. Using the IQE value and carrier decay lifetime, a radiative lifetime of 38 ps is extracted. Altogether, photonic properties of phase-transition c-GaN and their dependence on substrate patterning and material growth are reported.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: National Aeronautics and Space Administration (NASA); Univ. of Illinois – Urbana-Champaign; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1489243

Journal Information:: ACS Photonics, Vol. 5, Issue 3; ISSN 2330-4022

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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