Capacitance of a Ge/SiGe heterostructure field-effect transistor
- Florida State Univ., Tallahassee, FL (United States)
- Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
In this project we studied undoped Ge/SiGe heterostructure field-effect transistors, which had a very wide hole density range from 1x1010cm-2 to 3.5x1011 cm-2 tunable by (negative) gate voltage. At low temperatures reasonably high carriers mobility of about 3.4x105 cm2/Vs was achieved.
- Research Organization:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1484586
- Report Number(s):
- SAND-2018-13502R; 670589
- Country of Publication:
- United States
- Language:
- English
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