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Title: Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene

Abstract

Silicon-based two-dimensional (2D) materials are uniquely suited for integration in Si-based electronics. Silicene, an analogue of graphene, was recently fabricated on several substrates and was used to make a field-effect transistor. Here, we report that when Ru(0001) is used as a substrate, a range of distinct monolayer silicon structures forms, evolving toward silicene with increasing Si coverage. Low Si coverage produces a herringbone structure, a hitherto undiscovered 2D phase of silicon. With increasing Si coverage, herringbone elbows evolve into silicene-like honeycomb stripes under tension, resulting in a herringbone-honeycomb 2D superlattice. At even higher coverage, the honeycomb stripes widen and merge coherently to form silicene in registry with the substrate. Scanning tunneling microscopy (STM) was used to image the structures. The structural stability and electronic properties of the Si 2D structures, the interaction between the Si 2D structures and the Ru substrate, and the evolution of the distinct monolayer Si structures were elucidated by density functional theory (DFT) calculations. This work paves the way for further investigations of monolayer Si structures, the corresponding growth mechanisms, and possible functionalization by impurities.

Authors:
 [1];  [2];  [3];  [4];  [4];  [4];  [4];  [5];  [6]; ORCiD logo [5];  [3];  [5]
  1. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Chemistry, Inst. of Physics, Beijing Key Lab. for Nanomaterials and Nanodevices
  2. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics, Beijing Key Lab. for Nanomaterials and Nanodevices; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
  3. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics, Beijing Key Lab. for Nanomaterials and Nanodevices; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
  4. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics, Beijing Key Lab. for Nanomaterials and Nanodevices
  5. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics, Beijing Key Lab. for Nanomaterials and Nanodevices, School of Physical Sciences and Key Lab. of Vacuum Physics
  6. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Chemistry
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1484379
Alternate Identifier(s):
OSTI ID: 1597815
Grant/Contract Number:  
FG02-09ER46554; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 2; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Huang, Li, Zhang, Yan-Fang, Zhang, Yu-Yang, Xu, Wenyan, Que, Yande, Li, En, Pan, Jin-Bo, Wang, Ye-Liang, Liu, Yunqi, Du, Shi-Xuan, Pantelides, Sokrates T., and Gao, Hong-Jun. Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene. United States: N. p., 2017. Web. doi:10.1021/acs.nanolett.6b04804.
Huang, Li, Zhang, Yan-Fang, Zhang, Yu-Yang, Xu, Wenyan, Que, Yande, Li, En, Pan, Jin-Bo, Wang, Ye-Liang, Liu, Yunqi, Du, Shi-Xuan, Pantelides, Sokrates T., & Gao, Hong-Jun. Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene. United States. https://doi.org/10.1021/acs.nanolett.6b04804
Huang, Li, Zhang, Yan-Fang, Zhang, Yu-Yang, Xu, Wenyan, Que, Yande, Li, En, Pan, Jin-Bo, Wang, Ye-Liang, Liu, Yunqi, Du, Shi-Xuan, Pantelides, Sokrates T., and Gao, Hong-Jun. 2017. "Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene". United States. https://doi.org/10.1021/acs.nanolett.6b04804. https://www.osti.gov/servlets/purl/1484379.
@article{osti_1484379,
title = {Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene},
author = {Huang, Li and Zhang, Yan-Fang and Zhang, Yu-Yang and Xu, Wenyan and Que, Yande and Li, En and Pan, Jin-Bo and Wang, Ye-Liang and Liu, Yunqi and Du, Shi-Xuan and Pantelides, Sokrates T. and Gao, Hong-Jun},
abstractNote = {Silicon-based two-dimensional (2D) materials are uniquely suited for integration in Si-based electronics. Silicene, an analogue of graphene, was recently fabricated on several substrates and was used to make a field-effect transistor. Here, we report that when Ru(0001) is used as a substrate, a range of distinct monolayer silicon structures forms, evolving toward silicene with increasing Si coverage. Low Si coverage produces a herringbone structure, a hitherto undiscovered 2D phase of silicon. With increasing Si coverage, herringbone elbows evolve into silicene-like honeycomb stripes under tension, resulting in a herringbone-honeycomb 2D superlattice. At even higher coverage, the honeycomb stripes widen and merge coherently to form silicene in registry with the substrate. Scanning tunneling microscopy (STM) was used to image the structures. The structural stability and electronic properties of the Si 2D structures, the interaction between the Si 2D structures and the Ru substrate, and the evolution of the distinct monolayer Si structures were elucidated by density functional theory (DFT) calculations. This work paves the way for further investigations of monolayer Si structures, the corresponding growth mechanisms, and possible functionalization by impurities.},
doi = {10.1021/acs.nanolett.6b04804},
url = {https://www.osti.gov/biblio/1484379}, journal = {Nano Letters},
issn = {1530-6984},
number = 2,
volume = 17,
place = {United States},
year = {Mon Jan 23 00:00:00 EST 2017},
month = {Mon Jan 23 00:00:00 EST 2017}
}

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Group-IV 2D materials beyond graphene on nonmetal substrates: Challenges, recent progress, and future perspectives
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Electronic Band Engineering in Elemental 2D Materials
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Quantitative determination of atomic buckling of silicene by atomic force microscopy
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Functionalization of group-14 two-dimensional materials
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Planar Silicene: A New Silicon Allotrope Epitaxially Grown by Segregation
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Substrate-induced magnetism and topological phase transition in silicene
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2D Crystal–Based Fibers: Status and Challenges
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Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds
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Moiré‐Potential‐Induced Band Structure Engineering in Graphene and Silicene
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