The Role of Liquid Ink Transport in the Direct Placement of Quantum Dot Emitters onto Sub-Micrometer Antennas by Dip-Pen Nanolithography
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- The Australian National University, Canberra (Australia)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Advanced Creative Solutions Technology, Carlsbad, CA (United States)
Here, dip-pen nanolithography (DPN) is used to precisely position core/thick-shell (“giant”) quantum dots (gQDs; ≥10 nm in diameter) exclusively on top of silicon nanodisk antennas (≈500 nm diameter pillars with a height of ≈200 nm), resulting in periodic arrays of hybrid nanostructures and demonstrating a facile integration strategy toward next-generation quantum light sources. A three-step reading-inking-writing approach is employed, where atomic force microscopy (AFM) images of the pre-patterned substrate topography are used as maps to direct accurate placement of nanocrystals. The DPN “ink” comprises gQDs suspended in a non-aqueous carrier solvent, o-dichlorobenzene. Systematic analyses of factors influencing deposition rate for this non-conventional DPN ink are described for flat substrates and used to establish the conditions required to achieve small (sub-500 nm) feature sizes, namely: dwell time, ink-substrate contact angle and ink volume. Finally, it is shown that the rate of solvent transport controls the feature size in which gQDs are found on the substrate, but also that the number and consistency of nanocrystals deposited depends on the stability of the gQD suspension. In conclusion, the results lay the groundwork for expanded use of nanocrystal liquid inks and DPN for fabrication of multi-component nanostructures that are challenging to create using traditional lithographic techniques.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC52-06NA25396; NA0003525
- OSTI ID:
- 1482002
- Alternate ID(s):
- OSTI ID: 1457509
- Report Number(s):
- LA-UR-18-24213
- Journal Information:
- Small, Vol. 14, Issue 31; ISSN 1613-6810
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Development of Dip‐Pen Nanolithography (DPN) and Its Derivatives
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journal | April 2019 |
High-resolution scanning probe lithography technology: a review
|
journal | December 2019 |
Light-emitting metasurfaces
|
journal | July 2019 |
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