Magnetic MoS₂ Interface Monolayer on a CdS Nanowire by Cation Exchange

Journal Article · Mon Oct 03 00:00:00 EDT 2016 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/acs.jpcc.6b07679· OSTI ID:1480741

Tan, Chih-Shan ^[1]; Lu, Yu-Jung ^[2]; Chen, Chun-Chi ^[3]; Liu, Pei-Hsuan ^[1]; Gwo, Shangjr ^[2]; Guo, Guang-Yu ^[4]; Chen, Lih-Juann ^[1]

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1. National Tsing Hua Univ., Hsinchu (Taiwan). Dept. of Materials Science and Engineering
2. National Tsing Hua Univ., Hsinchu (Taiwan). Dept. of Physics
3. National Applied Research Lab., Hsinchu (Taiwan). National Nano Device Lab.
4. National Taiwan Univ., Taipei (Taiwan). Dept. of Physics; National Center for Theoretical Sciences, Hsinchu (Taiwan). Physics Division

MoS₂ atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next-generation electronic and electro-optical devices. We have achieved facile fabrication of MoS₂ thin films on CdS nanowires by cation exchange in solution at room temperature and importantly observed their extraordinary magnetic properties. We establish the atomic structure of the MoS₂/CdS heterostructure by taking atomic images of the MoS₂/CdS interface as well as performing first-principles density functional geometry optimizations and scanning transmission electron microscopy annular dark field image simulations. Furthermore, our first-principles density functional calculations for the MoS₂/CdS heterostructure reveal that the magnetism in the MoS₂/CdS heterostructure stems from the ferromagnetic MoS₂ monolayer next to the MoS₂/CdS interface. The ferromagnetism is attributed to the partial occupation of the Mo d_x²–y²/d_xy conduction band in the interfacial MoS₂ monolayer caused by the mixed covalent–ionic bonding among the MoS₂ and CdS monolayers near the MoS₂/CdS interface. Finally, these findings of the ferromagnetic MoS₂ monolayer with large spin polarization at the MoS₂/semiconductor interface suggest a new route for fabrication of the transition metal dichalcogenide-based magnetic semiconductor multilayers for applications in spintronic devices.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: Ministry of Science and Technology (MOST) (Taiwan)
• Grant/Contract Number: 103-2221-E-007-003; 104-2112-M-002-002-MY3
• OSTI ID: 1480741
• Journal Information: Journal of Physical Chemistry. C, Vol. 120, Issue 40; ISSN 1932-7447
• Publisher: American Chemical Society
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY