Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Nemšák, Slavomír; Gehlmann, Mathias; Kuo, Cheng-Tai; Lin, Shih-Chieh; Schlueter, Christoph; Mlynczak, Ewa; Lee, Tien-Lin; Plucinski, Lukasz; Ebert, Hubert; Di Marco, Igor; Minár, Ján; Schneider, Claus M.; Fadley, Charles S.

doi:10.1038/s41467-018-05823-z

Title: Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Journal Article · Fri Aug 17 00:00:00 EDT 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-05823-z· OSTI ID:1477416

Nemšák, Slavomír ^[1]; Gehlmann, Mathias ^[1];

^[2]; Lin, Shih-Chieh ^[2]; Schlueter, Christoph ^[3];

^[4]; Lee, Tien-Lin ^[3]; Plucinski, Lukasz ^[4]; Ebert, Hubert ^[5]; Di Marco, Igor ^[6]; Minár, Ján ^[7];

^[8]; Fadley, Charles S. ^[2]

Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Diamond Light Source, Didcot (United Kingdom)
Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
Ludwig Maximilian Univ., Munich (Germany). Dept. of Chemistry
Uppsala Univ. (Sweden). Dept. of Physics and Astronomy; Asia Pacific Center for Theoretical Physics, Pohang (Korea, Republic of)
Univ. of West Bohemia, Plzeň (Czech Republic). New Technologies-Research Center
Univ. of California, Davis, CA (United States). Dept. of Physics; Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); LBNL Laboratory Directed Research and Development (LDRD) Program; National Agency for Research (ANR) (France); Ministry of Education, Youth and Sports (Czech Republic); German Research Foundation (DFG)

Grant/Contract Number:: AC02-05CH11231; SC0014697; CZ.02.1.01/0.0/0.0/15.003/0000358

OSTI ID:: 1477416

Journal Information:: Nature Communications, Vol. 9; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Proposal for a photoelectron spectroscopy and microscopy beamline (0.5–11 keV) at the High Energy Photon Source Tang, Kun; Zheng, Lei; Wang, Jia-Ou Journal of Synchrotron Radiation, Vol. 26, Issue 2 https://doi.org/10.1107/s1600577519000523	journal	February 2019
High-accuracy bulk electronic bandmapping with eliminated diffraction effects using hard X-ray photoelectron momentum microscopy Babenkov, S.; Medjanik, K.; Vasilyev, D. Deutsches Elektronen-Synchrotron, DESY, Hamburg https://doi.org/10.3204/pubdb-2019-03333	text	January 2019
Progress in HAXPES performance combining full-field k-imaging with time-of-flight recording Medjanik, K.; Babenkov, S. V.; Chernov, S. Deutsches Elektronen-Synchrotron, DESY, Hamburg https://doi.org/10.3204/pubdb-2020-00317	text	January 2019
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