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Title: High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering

Journal Article · · Journal of Physics. D, Applied Physics
ORCiD logo [1];  [2];  [3];  [4]; ORCiD logo [5]; ORCiD logo [6]; ORCiD logo [5]
  1. Indian Institute of Technology Bombay, Mumbai (India); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Xi'an Jiaotong Univ., Shaanxi (People's Republic of China)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Fudan Univ., Shanghai (People's Republic of China)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  5. Indian Institute of Technology Bombay, Mumbai (India)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)

p-type transparent conducting Cu alloyed ZnS thin films from Cu$$_{{x}}$$ Zn$$_{{1-x}}$$ S targets ($x = 0.1$ , 0.2, 0.3, 0.4, and 0.5) were deposited on glass substrates via radio frequency sputtering. x-ray diffraction and TEM–SAED analysis show that all the films have sphalerite ZnS as the majority crystalline phase. In addition, films with 30% and 40% Cu show the presence of increasing amounts of crystalline Cu2S phase. Conductivity values ≥400 S $${\rm cm}^{-1}$$ were obtained for the films having 30% and 40% Cu, with the maximum conductivity of 752 S $${\rm cm}^{-1}$$ obtained for the film with 40% Cu. Temperature dependent electrical transport measurements indicate metallic as well as degenerate hole conductivity in the deposited films. The reflection-corrected transmittance of this Cu alloyed ZnS (40% Cu) film was determined to be ≥75% at 550 nm. In conclusion, the transparent conductor figure of merit ($$\Phi_{{\rm TC}}$$ ) of the Cu alloyed ZnS (40% Cu), calculated with the average value of transmittance between 1.5 to 2.5 eV, was ≈276 $$\mu{\rm S}$$ .

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1476574
Journal Information:
Journal of Physics. D, Applied Physics, Vol. 50, Issue 50; Related Information: © 2017 IOP Publishing Ltd.; ISSN 0022-3727
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

References (31)

Past achievements and future challenges in the development of optically transparent electrodes journal November 2012
Transparent Conducting Oxides for Photovoltaics journal March 2007
Transparent Electrodes for Efficient Optoelectronics journal March 2017
Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films journal January 2005
P-type electrical conduction in transparent thin films of CuAlO2 journal October 1997
Identification and design principles of low hole effective mass p-type transparent conducting oxides journal August 2013
P-Type Transparent Cu-Alloyed ZnS Deposited at Room Temperature journal March 2016
SrCu2O2: A p -type conductive oxide with wide band gap journal July 1998
Epitaxial growth of transparent p-type conducting CuGaO[sub 2] thin films on sapphire (001) substrates by pulsed laser deposition journal January 2001
Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure journal March 2001
Transparent p -type conducting CuScO2+x films journal August 2000
Transport and Defect Mechanisms in Cuprous Delafossites. 2. CuScO 2 and CuYO 2 journal December 2004
Transparent p -type semiconductor: LaCuOS layered oxysulfide journal October 2000
Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe journal February 2004
p-type transparent conductor: Zn-doped CuAlS2 journal February 2007
Transparent p -type conducting BaCu2S2 films journal June 2002
p-Type transparent Cu doped ZnS thin films by the chemical bath deposition method journal June 2014
Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS) x :(ZnS) 1– x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells journal February 2016
Role of Cu + on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties journal January 2016
Copper-alloyed ZnS as a p-type transparent conducting material journal August 2012
New figure of merit for transparent conductors journal September 1976
Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides journal September 1976
High Rate Electrochemical Capacitors from Three-Dimensional Arrays of Vanadium Nitride Functionalized Carbon Nanotubes journal November 2011
Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition journal January 2013
DFT+U studies of Cu doping and p-type compensation in crystalline and amorphous ZnS journal January 2015
Granular electronic systems journal April 2007
Two-dimensional hopping conductivity in a δ -doped GaAs / Al x Ga 1 x As heterostructure journal February 1999
Stability in a high humidity environment of TCO thin films deposited at low temperatures journal February 2008
Spray pyrolysis growth of a high figure of merit, nano-crystalline, p -type transparent conducting material at low temperature journal July 2015
Perovskite Sr-Doped LaCrO 3 as a New p-Type Transparent Conducting Oxide journal August 2015
Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit journal November 2016

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Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis journal June 2018
A Real-Time Wearable UV-Radiation Monitor based on a High-Performance p-CuZnS/n-TiO 2 Photodetector journal August 2018
Self-Powered n-SnO 2 /p-CuZnS Core-Shell Microwire UV Photodetector with Optimized Performance journal May 2018