Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors

Lanham, Steven J.; Kushner, Mark J.

doi:10.1063/1.4993785

Title: Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors

Journal Article · Tue Aug 22 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4993785· OSTI ID:1473911

^[1]; Kushner, Mark J. ^[2]

Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Electrical Engineering and Computer Science

The metrics for controlling reactive fluxes to wafers for microelectronics processing are becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling ion energy distributions to the wafer involve using several different frequencies and/or pulsed powers. Although effective, these strategies are often costly or present challenges in impedance matching. With the advent of matching schemes for wide band amplifiers, other strategies to customize ion energy distributions become available. In this study, we discuss results from a computational investigation of biasing substrates using chirped frequencies in high density, electronegative inductively coupled plasmas. Depending on the frequency range and chirp duration, the resulting ion energy distributions exhibit components sampled from the entire frequency range. However, the chirping process also produces transient shifts in the self-generated dc bias due to the reapportionment of displacement and conduction with frequency to balance the current in the system. Finally, the dynamics of the dc bias can also be leveraged towards customizing ion energy distributions.

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Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Fusion Energy Sciences (FES); National Science Foundation (NSF)

Grant/Contract Number:: SC0014132; PHY-1519117; CHE-1124724; SC0001319, DE-SC0014132; PHY-1519117, CHE-1124724

OSTI ID:: 1473911

Alternate ID(s):: OSTI ID: 1619834

Journal Information:: Journal of Applied Physics, Vol. 122, Issue 8; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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