Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Kumari, Shalini; Ortega, Nora; Pradhan, Dhiren K.; Kumar, Ashok; Scott, J. F.; Katiyar, Ram S.

doi:10.1063/1.4935481

Title: Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr_0.2Ti_0.8)O₃ thin films

Journal Article · Fri Nov 13 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4935481· OSTI ID:1469649

^[1]; Ortega, Nora ^[1]; Pradhan, Dhiren K. ^[1]; Kumar, Ashok ^[2]; Scott, J. F. ^[3]; Katiyar, Ram S. ^[1]

Univ. of Puerto Rico, San Juan, PR (United States)
National Physical Laboratory (CSIR), Delhi, India
Univ. of St. Andrews, Scotland (United Kingdom)

We report thickness dependent dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr_0.2Ti_0.8)O₃ thin films. The Pb(Zr_0.2Ti_0.8)_0.70Ni_0.30O_3-δ (PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant ~1000–1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570–630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (Eg) values from 4 eV to 3.4 eV and indirect-E_g values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic.

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Research Organization:: Univ. of Puerto Rico, San Juan, PR (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-08ER46526

OSTI ID:: 1469649

Alternate ID(s):: OSTI ID: 1225989

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 18; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 26 works

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