Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures
- Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics. Inst. for Functional Nanomaterials
In this paper, we studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/ LaNiO3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows JSC ~ 32 μA/cm2 and VOC ~ 0.04 V, which increase to maximum value of JSC ~ 303 (-206) μA/cm2 and VOC ~ -0.32 (0.26) V after upward (downward) poling at ±8 V. Finally, we believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.
- Research Organization:
- Univ. of Puerto Rico, San Juan, PR (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- FG02-08ER46526; 1002410
- OSTI ID:
- 1469589
- Alternate ID(s):
- OSTI ID: 1224326
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 16; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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