300 kV DC High Voltage Photogun with Inverted Insulator Geometry and CsK2sb Photocathode

Conference · Sun Jul 01 00:00:00 EDT 2018

DOI:https://doi.org/10.18429/JACoW-IPAC2018-THPMK110· OSTI ID:1469300

Wang, Yan ^[1]; Adderley, Philip A. ^[1]; Bullard, Donald (Bubba_ T. ^[1]; Benesch, Jay F. ^[1]; Grames, Joseph M. ^[1]; Hannon, Fay E. ^[1]; Hernandez-Garcia, Carlos ^[1]; Hansknecht, John C. ^[1]; Krafft, Geoffrey A. ^[1]; Kazimi, Reza ^[1]; Poelker, Matthew ^[1]; Mamun, Md Abdullah ^[1]; Suleiman, Riad S. ^[1]; Palacios, Jose R. ^[2]; Tiefenback, Michael G. ^[1]; Zhang, Shukui ^[1]; Wijethunga, W M Sajini ^[2]

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1. Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
2. Old Dominion Univ., Norfolk, VA (United States)

A compact DC high voltage photogun with inverted-insulator geometry was designed, built and operated reliably at 300 kV bias voltage using alkali-antimonide photocathodes. This presentation describes key electrostatic design features of the photogun with accompanying emittance measurements obtained across the entire photocathode surface that speak to field non-uniformity within the cathode/anode gap. A summary of initial photocathode lifetime measurements at beam currents up to 4.5 mA is also presented.

• Research Organization: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Nuclear Physics (NP)
• DOE Contract Number: AC05-06OR23177
• OSTI ID: 1469300
• Report Number(s): JLAB-ACO-18-2770; DOE/OR/23177-4535; R&D Project: 2018-LDRD-5
• Resource Relation: Conference: IPAC 2018, 29 Apr - 04 May 2018. Vancouver, BC Canada
• Country of Publication: United States
• Language: English