Layer thickness dependent strain rate sensitivity of Cu/amorphous CuNb multilayer

Fan, Z.; Liu, Y.; Xue, S.; Rahimi, R. M.; Bahr, D. F.; Wang, H.; Zhang, X.

doi:10.1063/1.4980850

Title: Layer thickness dependent strain rate sensitivity of Cu/amorphous CuNb multilayer

Journal Article · Tue Apr 18 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4980850· OSTI ID:1466208

Fan, Z. ^[1]; Liu, Y. ^[2]; Xue, S. ^[1]; Rahimi, R. M. ^[3]; Bahr, D. F. ^[3]; Wang, H. ^[4];

^[3]

Texas A & M Univ., College Station, TX (United States). Department of Mechanical Engineering
Shanghai Jiao Tong University, Shanghai (China). State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering
Purdue Univ., West Lafayette, IN (United States). School of Materials Engineering
Purdue Univ., West Lafayette, IN (United States). School of Materials Engineering and School of Electrical and Computer Engineering

We report strain rate sensitivity of crystalline materials is closely related to dislocation activity. In the absence of dislocations, amorphous alloys are usually considered to be strain rate insensitive. However, the strain rate sensitivity of crystalline/amorphous composites is rarely studied, especially at nanoscale. In this study, we show that the strain rate sensitivity of Cu/amorphous CuNb multilayers is layer thickness dependent. At small layer thickness (below 50 nm), the multilayers demonstrate limited strain rate sensitivity; at relatively large layer thickness (above 100 nm), the strain rate sensitivity of multilayers is close to that of the single layer Cu film. Finally, mechanisms that lead to size dependent variation of strain rate sensitivity in these multilayers are discussed.

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Research Organization:: Purdue Univ., West Lafayette, IN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0016337

OSTI ID:: 1466208

Alternate ID(s):: OSTI ID: 1361825

Journal Information:: Applied Physics Letters, Vol. 110, Issue 16; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 23 works

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