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Title: Process for large-scale ammonothermal manufacturing of gallium nitride boules

Patent ·
OSTI ID:1465761
; ; ;

Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

Research Organization:
SLT Technologies, Inc., Los Angeles, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
SC0006168
Assignee:
SLT Technologies, Inc. (Los Angeles, CA)
Patent Number(s):
10,036,099
Application Number:
14/599,335
OSTI ID:
1465761
Resource Relation:
Patent File Date: 2015 Jan 16
Country of Publication:
United States
Language:
English

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