Single-ion implantation for solid state quantum computer development

Journal Article · Thu Mar 28 00:00:00 EST 2002 · Proceedings of SPIE - The International Society for Optical Engineering

DOI:https://doi.org/10.1117/12.460808· OSTI ID:1464151

Schenkel, Thomas ^[1]; Meijer, J. ^[1]; Persaud, Arun ^[1]; McDonald, Joe W. ^[2]; Holder, J. P. ^[2]; Schneider, Dieter H. ^[2]

---

1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this paper we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for ³¹P^q+ ions. When ³¹P^q+ ions impinge on a wafer surface, their potential energy (9.3 keV for P¹⁵⁺) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Finally, exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC); National Security Agency (NSA) (United States); US Army Research Office (ARO)
• Grant/Contract Number: AC03-76SF00098; W-7405-ENG-48; MOD707501
• OSTI ID: 1464151
• Journal Information: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4656; ISSN 0277-786X
• Publisher: SPIE
• Country of Publication: United States
• Language: English

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
ions
silicon
ion implantation