Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber
Patent
·
OSTI ID:1464125
Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.
- Research Organization:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0006334
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Number(s):
- 10,032,949
- Application Number:
- 14/936,131
- OSTI ID:
- 1464125
- Resource Relation:
- Patent File Date: 2015 Nov 09
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber
Technique for achieving large-grain Ag.sub.2ZnSn(S,Se).sub.4thin films
Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
Patent
·
Tue Jun 11 00:00:00 EDT 2019
·
OSTI ID:1464125
+2 more
Technique for achieving large-grain Ag.sub.2ZnSn(S,Se).sub.4thin films
Patent
·
Tue Sep 18 00:00:00 EDT 2018
·
OSTI ID:1464125
Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
Patent
·
Tue Mar 28 00:00:00 EDT 2017
·
OSTI ID:1464125
+1 more