Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons

Senkovskiy, Boris V.; Fedorov, Alexander V.; Haberer, Danny; Farjam, Mani; Simonov, Konstantin A.; Preobrajenski, Alexei B.; Martensson, Niels; Atodiresei, Nicolae; Caciuc, Vasile; Blugel, Stefan; Rosch, Achim; Verbitskiy, Nikolay I.; Hell, Martin; Evtushinsky, Daniil V.; German, Raphael; Marangoni, Tomas; van Loosdrecht, Paul H.  M.; Fischer, Felix R.; Gruneis, Alexander

doi:10.1002/aelm.201600490

Title: Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons

Journal Article · Fri Mar 10 00:00:00 EST 2017 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201600490· OSTI ID:1461116

Senkovskiy, Boris V. ^[1]; Fedorov, Alexander V. ^[2]; Haberer, Danny ^[3]; Farjam, Mani ^[4]; Simonov, Konstantin A. ^[5]; Preobrajenski, Alexei B. ^[6]; Martensson, Niels ^[7]; Atodiresei, Nicolae ^[8]; Caciuc, Vasile ^[8]; Blugel, Stefan ^[8]; Rosch, Achim ^[9]; Verbitskiy, Nikolay I. ^[10]; Hell, Martin ^[1]; Evtushinsky, Daniil V. ^[11]; German, Raphael ^[1]; Marangoni, Tomas ^[3]; van Loosdrecht, Paul H. M. ^[1]; Fischer, Felix R. ^[3]; Gruneis, Alexander ^[1]

Univ. of Cologne (Germany). Inst. of Physics
Univ. of Cologne (Germany). Inst. of Physics; Saint Petersburg State Univ. (Russian Federation); Leibniz Inst. for Solid State and Materials Research (IFW Dresden), Dresden (Germany)
Univ. of California, Berkeley, CA (United States)
Inst. for Research in Fundamental Sciences (IPM), Tehran (Iran). School of Nano Science
Uppsala Univ. (Sweden). Dept. of Physics and Astronomy; Lund Univ. (Sweden). MAX IV Lab.
Lund Univ. (Sweden). MAX IV Lab.
Uppsala Univ. (Sweden). Dept. of Physics and Astronomy
Forschungszentrum Julich (Germany). Peter Grünberg Inst. Inst. for Advanced Simulation
Univ. of Cologne (Germany). Inst. for Theoretical Physics
Univ. of Cologne (Germany). Inst. of Physics; Univ. of Vienna (Austria). Faculty of Physics; Moscow State Univ., Moscow (Russian Federation). Dept. of Materials Science
Helmholtz Center for Materials and Energy, Berlin (Germany). Electron Storage Ring BESSY II

A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. In this paper, by using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm^-1) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. Finally, the present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); European Research Council (ERC); German Research Foundation (DFG); Russian Science Foundation; Swedish Research Council (SRC)

Grant/Contract Number:: SC0010409; 0939514; 648589; 321319; CRC1238; GR 3708/2-1; 14-13-00747

OSTI ID:: 1461116

Journal Information:: Advanced Electronic Materials, Vol. 3, Issue 4; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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