Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes

Liu, Wei; Chen, Yiqiao; Moy, Aaron; Poelker, Matthew; Stutzman, Marcy; Zhang, Shukui

doi:10.1063/1.5040593

Title: Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes

Journal Article · Wed Jul 11 00:00:00 EDT 2018 · AIP Advances

DOI:https://doi.org/10.1063/1.5040593· OSTI ID:1460083

Liu, Wei ^[1]; Chen, Yiqiao ^[2]; Moy, Aaron ^[2]; Poelker, Matthew ^[3]; Stutzman, Marcy ^[3];

^[3]

Chinese Academy of Sciences, Lanzhou (China); Univ. of Chinese Academy of Sciences, Beijing (China); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
SVT Associates, Inc., Eden Prairie, MN (United States)
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs. In this paper, we describe the evaluation of a strained superlattice structure composed of GaAsSb/AlGaAs and grown on a GaAs substrate. Theoretical analysis and numerical calculations show GaAsSb/AlGaAs SSL structures have the largest heavy-hole and light-hole energy splitting of all existing GaAs-class SSL structures, which should lead to the highest initial ESP. Five GaAsSb/AlGaAs SSL photocathode samples with different constituent species concentrations, number of layer pairs, and layer thicknesses were fabricated and evaluated. Here, the highest ESP was ~ 77% obtained from a photocathode based on the GaAsSb_0.15/Al_0.38GaAs (1.55/4.1nm ×15 layer pairs) SSL structure.

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Research Organization:: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Nuclear Physics (NP)

Grant/Contract Number:: AC05-06OR23177; SC0009516

OSTI ID:: 1460083

Alternate ID(s):: OSTI ID: 1459737

Report Number(s):: JLAB-ACC-18-2717; DOE/OR/23177-4440; TRN: US1901832

Journal Information:: AIP Advances, Vol. 8, Issue 7; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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