Experimental Study of the Detection Limit in Dual-Gate Biosensors Using Ultrathin Silicon Transistors

Wu, Ting; Alharbi, Abdullah; You, Kai-Dyi; Kisslinger, Kim; Stach, Eric A.; Shahrjerdi, Davood

doi:10.1021/acsnano.7b02986

Title: Experimental Study of the Detection Limit in Dual-Gate Biosensors Using Ultrathin Silicon Transistors

Journal Article · Wed Jun 21 00:00:00 EDT 2017 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.7b02986· OSTI ID:1433971

Wu, Ting ^[1]; Alharbi, Abdullah ^[1]; You, Kai-Dyi ^[1]; Kisslinger, Kim ^[2];

^[2];

^[1]

New York Univ., Brooklyn, NY (United States). Dept. of Electrical and Computer Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials

Dual-gate field-effect biosensors (bioFETs) with asymmetric gate capacitances were shown to surpass the Nernst limit of 59 mV/pH. However, previous studies have conflicting findings on the effect of the capacitive amplification scheme on the sensor detection limit, which is inversely proportional to the signal-to-noise ratio (SNR). In this paper, we present a systematic experimental investigation of the SNR using ultrathin silicon transistors. Our sensors operate at low voltage and feature asymmetric front and back oxide capacitances with asymmetry factors of 1.4 and 2.3. We demonstrate that in the dual-gate configuration, the response of our bioFETs to the pH change increases proportional to the asymmetry factor and indeed exceeds the Nernst limit. Further, our results reveal that the noise amplitude also increases in proportion to the asymmetry factor. We establish that the commensurate increase of the noise amplitude originates from the intrinsic low-frequency characteristic of the sensor noise, dominated by number fluctuation. Finally, these findings suggest that this capacitive signal amplification scheme does not improve the intrinsic detection limit of the dual-gate biosensors.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1433971

Report Number(s):: BNL-203506-2018-JAAM

Journal Information:: ACS Nano, Vol. 11, Issue 7; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors Gasparyan, Ferdinand; Zadorozhnyi, Ihor; Khondkaryan, Hrant Nanoscale Research Letters, Vol. 13, Issue 1 https://doi.org/10.1186/s11671-018-2494-5	journal	March 2018
Low-frequency noise in irradiated graphene FETs Wu, Ting; Alharbi, Abdullah; Taniguchi, Takashi Applied Physics Letters, Vol. 113, Issue 19 https://doi.org/10.1063/1.5051658	journal	November 2018
Quantum capacitance-limited MoS ₂ biosensors enable remote label-free enzyme measurements Le, Son T.; Guros, Nicholas B.; Bruce, Robert C. Nanoscale, Vol. 11, Issue 33 https://doi.org/10.1039/c9nr03171e	journal	January 2019
Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements Le, Son T.; Guros, Nicholas B.; Bruce, Robert C. arXiv https://doi.org/10.48550/arxiv.1902.10234	text	January 2019

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bioFETs
biosensor
detection limit
silicon-on-insulator
super-Nernstian
ultrathin silicon

Title: Experimental Study of the Detection Limit in Dual-Gate Biosensors Using Ultrathin Silicon Transistors

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