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Title: First-principles calculation of intrinsic defect chemistry and self-doping in PbTe

Journal Article · · npj Computational Materials
 [1];  [1];  [1];  [1]
  1. Colorado School of Mines, Golden, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)

Semiconductor dopability is inherently limited by intrinsic defect chemistry. In many thermoelectric materials, narrow band gaps due to strong spin-orbit interactions make accurate atomic level predictions of intrinsic defect chemistry and self-doping computationally challenging. For this study, we use different levels of theory to model point defects in PbTe, and compare and contrast the results against each other and a large body of experimental data. We find that to accurately reproduce the intrinsic defect chemistry and known self-doping behavior of PbTe, it is essential to (a) go beyond the semi-local GGA approximation to density functional theory, (b) include spin-orbit coupling, and (c) utilize many-body GW theory to describe the positions of individual band edges. The hybrid HSE functional with spin-orbit coupling included, in combination with the band edge shifts from G0W0 is the only approach that accurately captures both the intrinsic conductivity type of PbTe as function of synthesis conditions as well as the measured charge carrier concentrations, without the need for experimental inputs. Our results reaffirm the critical role of the position of individual band edges in defect calculations, and demonstrate that dopability can be accurately predicted in such challenging narrow band gap materials.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
Grant/Contract Number:
AC36-08GO28308; DMR-1309980; 1334713
OSTI ID:
1432441
Report Number(s):
NREL/JA-5K00-71271
Journal Information:
npj Computational Materials, Vol. 3, Issue 1; ISSN 2057-3960
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 57 works
Citation information provided by
Web of Science

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Effective n-type doping of Mg3Sb2 with group-3 elements journal January 2019
Point defects in PbCdTe solid solutions journal February 2020
Ab initio modeling and design of vanadia-based electrode materials for post-lithium batteries journal December 2019
Effect of intrinsic defects on the thermal conductivity of PbTe from classical molecular dynamics simulations journal October 2019
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Effective n-type Doping of Mg3Sb2 with Group-3 Elements text January 2018
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