Dynamic interface rearrangement in LaFeO3/n-SrTiO3 heterojunctions

Spurgeon, Steven R.; Sushko, Peter V.; Chambers, Scott A.; Comes, Ryan B.

doi:10.1103/PhysRevMaterials.1.063401

Title: Dynamic interface rearrangement in ${LaFeO}_{3} / n - {SrTiO}_{3}$ heterojunctions

Journal Article · Mon Nov 06 00:00:00 EST 2017 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.1.063401· OSTI ID:1430717

Spurgeon, Steven R. ^[1]; Sushko, Peter V. ^[1]; Chambers, Scott A. ^[1]; Comes, Ryan B. ^[2]

Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate; Auburn Univ., AL (United States). Dept. of Physics

Thin-film synthesis methods that have developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a limited understanding of growth pathways and kinetics. In this paper, we demonstrate that shuttered molecular beam epitaxy induces rearrangements of atomic planes at a polar/nonpolar junction of LaFeO₃ (LFO)/n-SrTiO₃ (STO) depending on the substrate termination. Surface characterization confirms that substrates with two different (TiO₂ and SrO) terminations were prepared prior to LFO deposition; however, local electron-energy-loss spectroscopy measurements of the final heterojunctions show a predominantly LaO/TiO₂ interfacial junction in both cases. Ab initio simulations suggest that the interfaces can be stabilized by trapping extra oxygen (in LaO/TiO₂) and forming oxygen vacancies (in FeO₂/SrO), which points to different growth kinetics in each case and may explain the apparent disappearance of the FeO₂/SrO interface. Finally, we conclude that judicious control of deposition time scales can be used to modify growth pathways, opening new avenues to control the structure and properties of interfacial systems.

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Research Organization:: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Biological and Environmental Research (BER); PNNL Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC05-76RL01830; PN13100/2581

OSTI ID:: 1430717

Alternate ID(s):: OSTI ID: 1407448

Report Number(s):: PNNL-SA-127972; TRN: US1802758

Journal Information:: Physical Review Materials, Vol. 1, Issue 6; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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Electronic Structure and Band Alignment of LaMnO ₃ /SrTiO ₃ Polar/Nonpolar Heterojunctions Kaspar, Tiffany C.; Sushko, Peter V.; Spurgeon, Steven R. Advanced Materials Interfaces, Vol. 6, Issue 1 https://doi.org/10.1002/admi.201801428	journal	November 2018
Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons Lin, Weinan; Li, Lei; Doğan, Fatih Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-10961-z	journal	July 2019
Atomic-scale mapping of interface reconstructions in multiferroic heterostructures Huang, Weichuan; Yin, Yuewei; Li, Xiaoguang Applied Physics Reviews, Vol. 5, Issue 4 https://doi.org/10.1063/1.5053426	journal	December 2018

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Title: Dynamic interface rearrangement in ${LaFeO}_{3} / n - {SrTiO}_{3}$ heterojunctions