Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Young, E. C.; Grandjean, N.; Mates, T. E.; Speck, J. S.

doi:10.1063/1.4968586

Title: Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Journal Article · Wed Nov 23 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4968586· OSTI ID:1429096

Young, E. C. ^[1];

^[2]; Mates, T. E. ^[1]; Speck, J. S. ^[1]

Univ. of California, Santa Barbara, CA (United States). Materials Dept.
Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Swiss Federal Inst. of Technology (EPFL), Lausanne (Switzerland). Inst. of Physics

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It is found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surface coverage is similar to 10(12) cm(-2), which is consistent with previous reports on GaAs and silicon wafers. At the onset of growth, the Ca species segregates at the growth front while incorporating at low levels. The incorporation rate is strongly temperature dependent. It is about 0.03% at 820 degrees C and increases by two orders of magnitude when the temperature is reduced to 600 degrees C, which is the typical growth temperature for InGaN alloy. Consequently, [Ca] is as high as 10(18) cm(-3) in InGaN/GaN quantum well structures. Such a huge concentration might be detrimental for the efficiency of light emitting diodes (LEDs) if one considers that Ca is potentially a source of Shockley-Read-Hall (SRH) defects. We thus developed a specific growth strategy to reduce [Ca] in the MBE grown LEDs, which consisted of burying Ca in a low temperature InGaN/GaN superlattice (SL) before the growth of the active region. Finally, two LED samples with and without an SL were fabricated. An increase in the output power by one order of magnitude was achieved when Ca was reduced in the LED active region, providing evidence for the role of Ca in the SRH recombination.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office; King Abdulaziz City for Science and Technology, Riyadh (Saudi Arabia); King Abdullah Univ. of Science and Technology, Thuwal (Saudi Arabia)

Grant/Contract Number:: EE0007096

OSTI ID:: 1429096

Alternate ID(s):: OSTI ID: 1333348; OSTI ID: 1635246

Journal Information:: Applied Physics Letters, Vol. 109, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 19 works

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Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C Chèze, C.; Feix, F.; Lähnemann, J. Applied Physics Letters, Vol. 112, Issue 2 https://doi.org/10.1063/1.5009184	journal	January 2018
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