Large On-Chip Amplification in Silicon via Forward Stimulated Brillouin Scattering

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · Sandia journal manuscript; Not yet accepted for publication

OSTI ID:1427236

Kittlaus, Eric ^[1]; Shin, Heedeuk ^[1]; Rakich, Peter ^[1]

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1. Yale Univ., New Haven, CT (United States)

Strong Brillouin coupling has only recently been realized in silicon using a new class of op- tomechanical waveguides that yield both optical and phononic con nement. Despite these major advances, appreciable Brillouin ampli cation has yet to be observed in silicon. Using new membrane- suspended silicon waveguide we report large Brillouin ampli cation for the rst time, reaching levels greater than 5 dB for modest pump powers, and demonstrate a record low (5 mW) threshold for net ampli cation. This work represents a crucial advance necessary to realize high-performance Brillouin lasers and ampli ers in silicon.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: Defense Advanced Research Projects Agency (DARPA); USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1427236
• Report Number(s): SAND-2015-9037J; 608053
• Journal Information: Sandia journal manuscript; Not yet accepted for publication, Related Information: See OSTIID 1427265 for supplementary information for this paper; ISSN 9999-0014
• Publisher: Sandia
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS