White light emitting diodes with super-high luminous efficacy
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journal
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August 2010 |
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
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journal
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June 2007 |
Recent results of blue and green InGaN laser diodes for laser projection
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conference
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February 2011 |
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
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journal
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July 1995 |
Research challenges to ultra-efficient inorganic solid-state lighting
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journal
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December 2007 |
Optical bandgap energy of wurtzite InN
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journal
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August 2002 |
InGaN/GaN multiple quantum well concentrator solar cells
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journal
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August 2010 |
Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells
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journal
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March 2012 |
In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
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journal
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December 1997 |
Indium induced step transformation during InGaN growth on GaN
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journal
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August 2010 |
Connection between GaN and InGaN growth mechanisms and surface morphology
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journal
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April 2014 |
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
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journal
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July 2002 |
Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities
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journal
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July 2014 |
Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength
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journal
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March 2014 |
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
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journal
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February 1998 |
The structure and optoelectronic properties of dislocations in GaN
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journal
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November 2000 |
Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates: Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates
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journal
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February 2008 |
Effects of macroscopic polarization in III-V nitride multiple quantum wells
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journal
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September 1999 |
High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates: High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates
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journal
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September 2013 |
InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range
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journal
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November 2013 |
High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates: High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates
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journal
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February 2014 |
Development of InGaN-based red LED grown on (0001) polar surface
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journal
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June 2014 |
High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
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journal
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July 2010 |
Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control
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journal
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March 2008 |
GaN Growth Using GaN Buffer Layer
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journal
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October 1991 |
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
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journal
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June 2005 |
Controlling indium incorporation in InGaN barriers with dilute hydrogen flows
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journal
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March 2014 |
Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells
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journal
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September 2012 |
Band parameters for III–V compound semiconductors and their alloys
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journal
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June 2001 |
Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate
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journal
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January 2012 |
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
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journal
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May 2005 |
Thermal stability of thin InGaN films on GaN
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journal
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May 2010 |
Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions
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journal
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October 1999 |
Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells
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journal
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August 2005 |
Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction
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journal
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July 1999 |
Indium adsorption on GaN under metal-organic chemical vapor deposition conditions
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journal
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October 2006 |
Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies
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journal
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April 2001 |
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
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journal
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May 2002 |
The critical thickness of InGaN on (0001)GaN
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journal
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November 2008 |
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy
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journal
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April 2006 |
Equilibrium critical thickness for misfit dislocations in III-nitrides
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journal
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December 2008 |
Point defects introduced by InN alloying into In x Ga 1− x N probed using a monoenergetic positron beam
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journal
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March 2013 |
Positron Annihilation Spectroscopy on Nitride-Based Semiconductors
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journal
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August 2013 |
Drift, diffusion, and trapping of hydrogen in p -type GaN
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journal
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December 2002 |
Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes
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journal
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September 2012 |
Hydrogen isotope exchange and the surface barrier in p-type gallium nitride
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journal
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January 2004 |
Annealing of ion implanted gallium nitride
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journal
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March 1998 |
Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison
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journal
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July 2014 |