Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1420867
- Report Number(s):
- SAND2016-4642C
Journal ID: ISSN 0018--9499; 640453
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Journal Volume: 64; Journal Issue: 1; Conference: Proposed for presentation at the DTRA/NRO Review.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
King, Michael Patrick, Wu, Kevin, Eller, M., Samavedam, S., Draper, Bruce L., Meisenheimer, Timothy L., Zhang, E., Shetler, K. J., Haeffner, T. D., and Massengill, Lloyd W. Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.. United States: N. p., 2016.
Web. doi:10.1109/TNS.2016.2634538.
King, Michael Patrick, Wu, Kevin, Eller, M., Samavedam, S., Draper, Bruce L., Meisenheimer, Timothy L., Zhang, E., Shetler, K. J., Haeffner, T. D., & Massengill, Lloyd W. Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.. United States. https://doi.org/10.1109/TNS.2016.2634538
King, Michael Patrick, Wu, Kevin, Eller, M., Samavedam, S., Draper, Bruce L., Meisenheimer, Timothy L., Zhang, E., Shetler, K. J., Haeffner, T. D., and Massengill, Lloyd W. 2016.
"Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.". United States. https://doi.org/10.1109/TNS.2016.2634538. https://www.osti.gov/servlets/purl/1420867.
@article{osti_1420867,
title = {Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.},
author = {King, Michael Patrick and Wu, Kevin and Eller, M. and Samavedam, S. and Draper, Bruce L. and Meisenheimer, Timothy L. and Zhang, E. and Shetler, K. J. and Haeffner, T. D. and Massengill, Lloyd W.},
abstractNote = {Abstract not provided.},
doi = {10.1109/TNS.2016.2634538},
url = {https://www.osti.gov/biblio/1420867},
journal = {},
issn = {0018--9499},
number = 1,
volume = 64,
place = {United States},
year = {Sun May 01 00:00:00 EDT 2016},
month = {Sun May 01 00:00:00 EDT 2016}
}
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Works referencing / citing this record:
A novel body-on-insulator (BOI) FinFET with excellent TID tolerance and scaling capability
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- Wang, Jianing; An, Xia; Ren, Zhexuan
- Semiconductor Science and Technology, Vol. 34, Issue 10
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- Abada, A.; Abbrescia, M.; AbdusSalam, S. S.
- The European Physical Journal Special Topics, Vol. 228, Issue 2
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- Abada, A.; Abbrescia, M.; AbdusSalam, S. S.
- The European Physical Journal Special Topics, Vol. 228, Issue 4
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- Abada, A.; Abbrescia, M.; AbdusSalam, S. S.
- Apollo - University of Cambridge Repository
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- Abada, A.; Abbrescia, M.; AbdusSalam, S. S.
- Deutsches Elektronen-Synchrotron, DESY, Hamburg
FCC-hh: The Hadron Collider
text, January 2019
- Abada, A.; Abbrescia, M.; AbdusSalam, S. S.
- Deutsches Elektronen-Synchrotron, DESY, Hamburg
FCC-ee: The Lepton Collider
text, January 2019
- Abada, A.; Abbrescia, M.; AbdusSalam, S. S.
- Apollo - University of Cambridge Repository