Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures

Kim, Jonghwan; Jin, Chenhao; Chen, Bin; Cai, Hui; Zhao, Tao; Lee, Puiyee; Kahn, Salman; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Crommie, Michael F.; Wang, Feng

doi:10.1126/sciadv.1700518

Title: Observation of ultralong valley lifetime in WSe₂/MoS₂ heterostructures

Journal Article · Wed Jul 26 00:00:00 EDT 2017 · Science Advances

DOI:https://doi.org/10.1126/sciadv.1700518· OSTI ID:1419435

^[1]; Jin, Chenhao ^[2];

^[3]; Cai, Hui ^[3]; Zhao, Tao ^[2];

^[2];

^[4]; Taniguchi, Takashi ^[4]; Tongay, Sefaattin ^[3]; Crommie, Michael F. ^[5];

^[5]

Univ. of California, Berkeley, CA (United States); Pohang Univ. of Science and Technology, Pohang (Korea)
Univ. of California, Berkeley, CA (United States)
Arizona State Univ., Tempe, AZ (United States)
National Institute for Materials Science, Tsukuba (Japan)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe₂/MoS₂ heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe₂ layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1419435

Journal Information:: Science Advances, Vol. 3, Issue 7; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 106 works

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