Stitching h-BN by atomic layer deposition of LiF as a stable interface for lithium metal anode

Xie, Jin; Liao, Lei; Gong, Yongji; Li, Yanbin; Shi, Feifei; Pei, Allen; Sun, Jie; Zhang, Rufan; Kong, Biao; Subbaraman, Ram; Christensen, Jake; Cui, Yi

doi:10.1126/sciadv.aao3170

Title: Stitching h-BN by atomic layer deposition of LiF as a stable interface for lithium metal anode

Journal Article · Wed Nov 29 00:00:00 EST 2017 · Science Advances

DOI:https://doi.org/10.1126/sciadv.aao3170· OSTI ID:1419315

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^[1]; Shi, Feifei ^[1];

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Stanford Univ., Stanford, CA (United States)
Bosch Research and Technology Center North America, Palo Alto, CA (United States)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Defects are important features in two-dimensional (2D) materials that have a strong influence on their chemical and physical properties. Through the enhanced chemical reactivity at defect sites (point defects, line defects, etc.), one can selectively functionalize 2D materials via chemical reactions and thereby tune their physical properties. We demonstrate the selective atomic layer deposition of LiF on defect sites of h-BN prepared by chemical vapor deposition. The LiF deposits primarily on the line and point defects of h-BN, thereby creating seams that hold the h-BN crystallites together. The chemically and mechanically stable hybrid LiF/h-BN film successfully suppresses lithium dendrite formation during both the initial electrochemical deposition onto a copper foil and the subsequent cycling. In conclusion, the protected lithium electrodes exhibit good cycling behavior with more than 300 cycles at relatively high coulombic efficiency (>95%) in an additive-free carbonate electrolyte.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: award338316; Battery Materials Research (BMR) & Battery 500 Consortium program; award338315; (BERN) Grant No. 03.25.SS.15; AC02-76SF00515

OSTI ID:: 1419315

Journal Information:: Science Advances, Vol. 3, Issue 11; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 211 works

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