Optical properties of implanted Xe color centers in diamond
- Univ. of Technology Sydney, Ultimo, NSW (Australia). School of Mathematical and Physical Sciences
- Nanyang Technological Univ. (Singapore). School of Physical and Mathematical Sciences, Division of Physics and Applied Physics
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Univ. of Warwick, Coventry (United Kingdom). Dept. of Physics
Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. Here in this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at 794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Finally, our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE; Australian Research Council (ARC); Asian Office of Aerospace Research and Development
- Grant/Contract Number:
- AC52-07NA27344; FA2386-17-1-4064
- OSTI ID:
- 1418933
- Alternate ID(s):
- OSTI ID: 1495932
- Report Number(s):
- LLNL-JRNL-727262
- Journal Information:
- Optics Communications, Vol. 411, Issue C; ISSN 0030-4018
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
On the route to produce conductive Ni-related color centers in CVD-grown diamond
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journal | July 2019 |
High-pressure, high-temperature molecular doping of nanodiamond
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journal | May 2019 |
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