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Title: Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

Journal Article · · Physica Status Solidi. A, Applications and Materials Science
ORCiD logo [1];  [2];  [2];  [1]
  1. Univ. of Toledo, OH (United States). Wright Center for Photovoltaics Innovation and Commercialization (PVIC)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)

Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through‐the‐silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128–2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300–2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measured total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308; DE‐AC36‐08GO28308
OSTI ID:
1418122
Alternate ID(s):
OSTI ID: 1400003
Report Number(s):
NREL/JA-5J00-68655
Journal Information:
Physica Status Solidi. A, Applications and Materials Science, Vol. 214, Issue 12; ISSN 1862-6300
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

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Cited By (1)

Photogenerated Carrier Transport Properties in Silicon Photovoltaics journal December 2019