Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry

Yalon, Eilam; Aslan, Ozgur Burak; Smithe, Kirby K. H.; McClellan, Connor J.; Suryavanshi, Saurabh V.; Xiong, Feng; Sood, Aditya; Neumann, Christopher M.; Xu, Xiaoqing; Goodson, Kenneth E.; Heinz, Tony F.; Pop, Eric

doi:10.1021/acsami.7b11641

Title: Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS₂ by Raman Thermometry

Journal Article · Fri Oct 20 00:00:00 EDT 2017 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.7b11641· OSTI ID:1417661

^[1]; Aslan, Ozgur Burak ^[2];

^[1];

^[1]; Suryavanshi, Saurabh V. ^[1]; Xiong, Feng ^[3]; Sood, Aditya ^[1];

^[1]; Xu, Xiaoqing ^[1]; Goodson, Kenneth E. ^[1]; Heinz, Tony F. ^[2];

^[1]

Stanford Univ., Stanford, CA (United States)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., Stanford, CA (United States); Univ. of Pittsburgh, Pittsburgh, PA (United States)

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS₂ with AlN and SiO₂, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MW m^–2 K^–1 near room temperature, increasing as ~ T^0.65 in the range 300–600 K. The similar TBC of MoS₂ with the two substrates indicates that MoS₂ is the “softer” material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. As a result, our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515; DGE-114747; EEC-1449548; 1542883; 1534279

OSTI ID:: 1417661

Journal Information:: ACS Applied Materials and Interfaces, Vol. 9, Issue 49; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 97 works

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