Epitaxial growth of high quality SrFeO3 films on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7

Hong, Deshun; Liu, Changjiang; Pearson, John; Bhattacharya, Anand

doi:10.1063/1.5002672

Title: Epitaxial growth of high quality SrFeO₃ films on (001) oriented (LaAlO₃)_0.3(Sr₂TaAlO₆)_0.7

Journal Article · Mon Dec 04 00:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5002672· OSTI ID:1415602

Hong, Deshun ^[1]; Liu, Changjiang ^[1]; Pearson, John ^[1];

^[1]

Argonne National Lab. (ANL), Argonne, IL (United States)

Growth of strontium ferrite SrFeO₃ films with stoichiometry of (1:1:3) is challenging as the unstable Fe⁴⁺ oxidation state favors the formation of O vacancies. Here, we report layer by layer growth of SrFeO₃ on (001) oriented (LaAlO₃)_0.3(Sr₂TaAlO₆)_0.7 using ozone assisted molecular beam epitaxy. Upon cooling from room temperature, the film’s resistivity decreased from 750 μΩ cm to 150 μΩ cm, as low as the best single crystals, with two identifiable transition points near 110 K and 60 K in resistivity measurements, being hysteretic between cooling and warming through the 60 K transition. During various annealing steps, the low temperature resistivity changes by orders of magnitude, accompanied by an increase in the c-axis lattice parameter. The hysteresis near 60 K persists for a wide range of annealing conditions. We have identified conditions under which changes due to annealing can be reversed. Here, we attribute changes in resistivity and out of plane lattice parameter to the reversible movement of oxygen ions in the lattice. SrFeO₃ may be a promising material for resistive memory applications based upon the control of oxygen vacancies.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE

Grant/Contract Number:: AC02-06CH11357; DEAC02-06CH11357

OSTI ID:: 1415602

Alternate ID(s):: OSTI ID: 1411987

Journal Information:: Applied Physics Letters, Vol. 111, Issue 23; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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Spin Seebeck effect in insulating SrFeO _3−δ films Hong, Deshun; Liu, Changjiang; Pearson, John E. Applied Physics Letters, Vol. 114, Issue 24 https://doi.org/10.1063/1.5097422	journal	June 2019

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Title: Epitaxial growth of high quality SrFeO₃ films on (001) oriented (LaAlO₃)_0.3(Sr₂TaAlO₆)_0.7