Towards zero-threshold optical gain using charged semiconductor quantum dots

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon; Klimov, Victor Ivanovich

doi:10.1038/nnano.2017.189

Title: Towards zero-threshold optical gain using charged semiconductor quantum dots

Journal Article · Mon Oct 16 00:00:00 EDT 2017 · Nature Nanotechnology

DOI:https://doi.org/10.1038/nnano.2017.189· OSTI ID:1415416

Wu, Kaifeng ^[1];

^[2];

^[3];

^[3]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chinese Academy of Sciences, Dalian (China)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain threshold due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1415416

Report Number(s):: LA-UR-17-26002; TRN: US1800810

Journal Information:: Nature Nanotechnology, Vol. 12, Issue 12; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 90 works

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