Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures
A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.
- Research Organization:
- Old Dominion University Research Foundation, Norfolk, VA (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- Old Dominion University Research Foundation (Norfolk, VA)
- Patent Number(s):
- 9,852,891
- Application Number:
- 14/688,363
- OSTI ID:
- 1414940
- Resource Relation:
- Patent File Date: 2015 Apr 16
- Country of Publication:
- United States
- Language:
- English
Process chamber cleaning method
|
patent-application | May 2007 |
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