Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi 2 Se 3

Yilmaz, Turgut; Hines, William; Sun, Fu-Chang; Pletikosić, Ivo; Budnick, Joseph; Valla, Tonica; Sinkovic, Boris

doi:10.1016/j.apsusc.2017.02.160

Title: Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi 2 Se 3

Journal Article · Tue Feb 21 00:00:00 EST 2017 · Applied Surface Science

DOI:https://doi.org/10.1016/j.apsusc.2017.02.160· OSTI ID:1412746

Yilmaz, Turgut ^[1]; Hines, William ^[1]; Sun, Fu-Chang ^[1]; Pletikosić, Ivo ^[2]; Budnick, Joseph ^[1]; Valla, Tonica ^[3]; Sinkovic, Boris ^[1]

Univ. of Connecticut, Storrs, CT (United States)
Princeton Univ., NJ (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. Angle resolved photoemission spectroscopy (ARPES) shows that Cr doped into the bulk opens a surface state energy gap which can be seen at room temperature; much higher than the measured ferromagnetic transition temperature of ≈ 10 K. On the other hand, similar ARPES measurements show that the surface states remain gapless down to 15 K for films with Cr surface deposition. In addition, core-level photoemission spectroscopy of the Bi 5d, Se 3d, and Cr 3p core levels show distinct differences in the chemical environment for the two methods of Cr introduction. Surface deposition of Cr results in the formation of shoulders on the lower binding energy side for the Bi 5d peaks and two distinct Cr 3p peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704; AC02-98CH10886

OSTI ID:: 1412746

Alternate ID(s):: OSTI ID: 1419525

Report Number(s):: BNL-114706-2017-JA; R&D Project: PM015; KC0207010

Journal Information:: Applied Surface Science, Vol. 407, Issue C; ISSN 0169-4332

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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Gap-like feature observed in the non-magnetic topological insulators Yilmaz, T.; Pertsova, A.; Hines, W. Journal of Physics: Condensed Matter, Vol. 32, Issue 14 https://doi.org/10.1088/1361-648x/ab6349	journal	January 2020
Photon energy and polarization-dependent electronic structure of Cr-doped ${Bi}_{2} {Se}_{3}$ Yilmaz, T.; Gu, G. D.; Vescovo, E. Physical Review Materials, Vol. 4, Issue 2 https://doi.org/10.1103/physrevmaterials.4.024201	journal	February 2020

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