Evidence for an Excitonic Insulator Phase in a Zero-Gap InAs/GaSb Bilayer.

Conference · Tue Nov 01 00:00:00 EDT 2016

OSTI ID:1410774

Diez, E.; Pezzini, S.; Yu, Wenlong; Clerico, V.; Hernandez Fuentevilla, C.; Shi, Xiang; Jiang, Y.; Saha, D.; Lou, W. K.; Chang, K.; Huang, D. H.; Gumbs, G.; Smirnov, D.; Stanton, C. J.; Jiang, Z.; Bellani, V.; Meziani, Y.; Hawkins, Samuel D.; Klem, John F.; Pan, Wei

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1410774
• Report Number(s): SAND2016-11998C; 649478
• Resource Relation: Conference: Proposed for presentation at the The Electronic and Optical Properties of 2D and Dirac Materials held December 12-14, 2016 in Jacksonville, FL.
• Country of Publication: United States
• Language: English