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Title: Superconductor to weak-insulator transitions in disordered tantalum nitride films

Journal Article · · Physical Review B
 [1];  [2];  [2];  [2];  [2]
  1. Stanford Univ., Stanford, CA (United States); Harvey Mudd College, Claremont, CA (United States)
  2. Stanford Univ., Stanford, CA (United States)

Here, we study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic-field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents zν ≈ 1.3, with a corresponding critical field Hc << Hc2, the upper critical field. The Hall effect exhibits a crossing point near Hc, but with a nonuniversal critical value ρcxy comparable to the normal-state Hall resistivity. We propose that high-carrier-density metals will always exhibit this pattern of behavior at the boundary between superconducting and (trivially) insulating ground states.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
NSF-DMR-9508419; AC02-76SF00515
OSTI ID:
1410604
Alternate ID(s):
OSTI ID: 1406153
Journal Information:
Physical Review B, Vol. 96, Issue 13; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

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Evolution of spin dynamics across the discontinuous metal-insulator transition in a deformable lattice journal September 2019

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