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Title: High throughput semiconductor deposition system

Abstract

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1409831
Patent Number(s):
9,824,890
Application Number:
14/801,551
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO); Wisconsin Alumni Research Foundation (Madison, WI)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jul 16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Young, David L., Ptak, Aaron Joseph, Kuech, Thomas F., Schulte, Kevin, and Simon, John D. High throughput semiconductor deposition system. United States: N. p., 2017. Web.
Young, David L., Ptak, Aaron Joseph, Kuech, Thomas F., Schulte, Kevin, & Simon, John D. High throughput semiconductor deposition system. United States.
Young, David L., Ptak, Aaron Joseph, Kuech, Thomas F., Schulte, Kevin, and Simon, John D. 2017. "High throughput semiconductor deposition system". United States. https://www.osti.gov/servlets/purl/1409831.
@article{osti_1409831,
title = {High throughput semiconductor deposition system},
author = {Young, David L. and Ptak, Aaron Joseph and Kuech, Thomas F. and Schulte, Kevin and Simon, John D.},
abstractNote = {A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.},
doi = {},
url = {https://www.osti.gov/biblio/1409831}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 21 00:00:00 EST 2017},
month = {Tue Nov 21 00:00:00 EST 2017}
}

Works referenced in this record:

Method and Arrangement for Providing Chalcogens
patent-application, June 2010


Continuous Feed Chemical Vapor Deposition System
patent-application, December 2010


Gallium Contamination of InP Epitaxial Layers in InP∕InGaAsP Multilayer Structures Grown by Hydride Transport Vapor Phase Epitaxy
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Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies
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40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008


Hydride vapor phase epitaxy revisited
journal, June 1997


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conference, June 2006


Hydride VPE growth technique for InP/GaInAsP system
journal, March 1989


Vapor-Phase Epitaxy of Group III-V Compound Optoelectronic Devices
book, October 1985


Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique
journal, January 1981


Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs
journal, August 2012


Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy
journal, April 1981


Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
journal, December 2007