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Title: Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4985333· OSTI ID:1408470
 [1];  [2];  [3];  [3]; ORCiD logo [3];  [4];  [5]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division; Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  2. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering , Tsinghua-Berkeley Shenzhen Inst.
  3. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  4. Arizona State Univ., Tempe, AZ (United States). School for Engineering of Matter, Transport and Energy
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division; Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering, Tsinghua-Berkeley Shenzhen Inst.

Black phosphorus (BP) is a layered semiconductor with a high mobility of up to ~1000 cm 2 V -1 s -1 and a narrow bandgap of ~0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. In order to elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons (~100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck co efficient increase with temperature, a behavior contradictory to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. Furthermore, the hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1408470
Alternate ID(s):
OSTI ID: 1378420
Journal Information:
Applied Physics Letters, Vol. 111, Issue 10; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 36 works
Citation information provided by
Web of Science

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Cited By (6)

Thermal Transport in 2D Semiconductors—Considerations for Device Applications journal August 2019
Perspectives on Thermoelectricity in Layered and 2D Materials journal September 2018
2D Materials for Large‐Area Flexible Thermoelectric Devices journal November 2019
Impact ionization by hot carriers in a black phosphorus field effect transistor journal August 2018
Electron localization in niobium doped CaMnO 3 due to the energy difference of electronic states of Mn and Nb journal January 2018
A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems journal June 2019

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