Methods for top-down fabrication of wafer scale TMDC monolayers
Patent
·
OSTI ID:1407949
A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- UChicago Argonne, LLC
- Patent Number(s):
- 9,809,903
- Application Number:
- 15/061,696
- OSTI ID:
- 1407949
- Resource Relation:
- Patent File Date: 2016 Mar 04
- Country of Publication:
- United States
- Language:
- English
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