Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation
[2];
- Univ. of Nebraska, Lincoln, NE (United States). Dept. of Mechanical and Materials Engineering
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Univ. of Nebraska, Lincoln, NE (United States). Dept. of Electrical Engineering, Center for Microelectronics and Optical Materials Research
Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B10C2+x:Hy) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B10C2+x:Hy film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He+ ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B10C2+x:Hy and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1406231
- Report Number(s):
- LA-UR-17-27545; TRN: US1703034
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 63, Issue 6; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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