The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition
InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 14041
- Report Number(s):
- SAND99-2465C; TRN: AH200136%%351
- Resource Relation:
- Conference: The 195th Meeting of the Electrochemical Society, Seattle, WA (US), 05/02/1999--05/06/1999; Other Information: PBD: 16 Sep 1999
- Country of Publication:
- United States
- Language:
- English
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