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Title: Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

Journal Article · · Journal of Vacuum Science and Technology B
DOI:https://doi.org/10.1116/1.4995816· OSTI ID:1399521
 [1];  [1];  [1];  [2];  [2];  [3];  [4]
  1. Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering
  2. Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering
  3. Tamura Corporation, Sayama (Japan). Japan and Novel Crystal Technology, Inc.
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
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In this work, the use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10-5 Ω cm2 were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1399521
Alternate ID(s):
OSTI ID: 1396066
Journal Information:
Journal of Vacuum Science and Technology B, Vol. 35, Issue 6; ISSN 2166-2746
Publisher:
American Vacuum Society/AIPCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 33 works
Citation information provided by
Web of Science

Cited By (8)

Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au journal January 2019
A review of Ga 2 O 3 materials, processing, and devices journal March 2018
Band alignment of In 2 O 3 /β-Ga 2 O 3 interface determined by X-ray photoelectron spectroscopy journal July 2018
Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al 0.14 Ga 0.86 ) 2 O 3 journal January 2019
Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β -Ga 2 O 3 journal January 2019
Recent Advances in β-Ga2O3–Metal Contacts journal August 2018
Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ($$ \overline{2}01 $$) heterojunctions journal August 2019
Review of gallium-oxide-based solar-blind ultraviolet photodetectors journal January 2019

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36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
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