Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited).
Conference
·
OSTI ID:1398363
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1398363
- Report Number(s):
- SAND2016-9813C; 647914
- Resource Relation:
- Conference: Proposed for presentation at the European Materials Research Society held September 19-22, 2016 in Warsaw, Poland.
- Country of Publication:
- United States
- Language:
- English
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