Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N-Type PbTe to High Performance

Tan, Gangjian; Stoumpos, Constantinos C.; Wang, Si; Bailey, Trevor P.; Zhao, Li‐Dong; Uher, Ctirad; Kanatzidis, Mercouri G.

doi:10.1002/aenm.201700099

Title: Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N-Type PbTe to High Performance

Journal Article · Mon May 22 00:00:00 EDT 2017 · Advanced Energy Materials

DOI:https://doi.org/10.1002/aenm.201700099· OSTI ID:1395373

^[1]; Stoumpos, Constantinos C. ^[1]; Wang, Si ^[2]; Bailey, Trevor P. ^[3]; Zhao, Li‐Dong ^[4]; Uher, Ctirad ^[3]; Kanatzidis, Mercouri G. ^[1]

Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics; Wuhan Univ. of Technology (China). State Key Lab. of Advanced Technology for Materials Synthesis and Processing
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
Beihang Univ., Beijing (China). School of Materials Science and Engineering

A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n‐type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb‐doped PbTe exhibits much higher carrier mobility than similar Bi‐doped materials, and accordingly, delivers higher power factors and superior ZT . The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n‐type charge carriers. Building on this result, the ZT of Pb _0.9875 Sb _0.0125 Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m ⁻¹ K ⁻¹ at 900 K, making this material a robust candidate for high‐temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1395373

Alternate ID(s):: OSTI ID: 1393302

Journal Information:: Advanced Energy Materials, Vol. 7, Issue 18; ISSN 1614-6832

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: ENGLISH

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Cited by: 106 works

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Title: Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N-Type PbTe to High Performance

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