Ferroelectricity in Pb1+δZrO3 Thin Films
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry, Materials Sciences Division
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source; Univ. of Science and Technology, Hefei (China). National Sychrotron Radiation Lab., CAS Key Lab. of Materials for Energy Conversion
- Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
- Kavli Energy NanoSciences Inst., Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry, Materials Sciences Division
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
© 2017 American Chemical Society. Antiferroelectric PbZrO 3 is being considered for a wide range of applications where the competition between centrosymmetric and noncentrosymmetric phases is important to the response. Here, we focus on the epitaxial growth of PbZrO 3 thin films and understanding the chemistry-structure coupling in Pb 1+δ ZrO 3 (δ = 0, 0.1, 0.2). High-quality, single-phase Pb 1+δ ZrO 3 films are synthesized via pulsed-laser deposition. Although no significant lattice parameter change is observed in X-ray studies, electrical characterization reveals that while the PbZrO 3 and Pb 1.1 ZrO 3 heterostructures remain intrinsically antiferroelectric, the Pb 1.2 ZrO 3 heterostructures exhibit a hysteresis loop indicative of ferroelectric response. Further X-ray scattering studies reveal strong quarter-order diffraction peaks in PbZrO 3 and Pb 1.1 ZrO 3 heterostructures indicative of antiferroelectricity, while no such peaks are observed for Pb 1.2 ZrO 3 heterostructures. Density functional theory calculations suggest the large cation nonstoichiometry is accommodated by incorporation of antisite Pb Zr defects, which drive the Pb 1.2 ZrO 3 heterostructures to a ferroelectric phase with R3c symmetry. In the end, stabilization of metastable phases in materials via chemical nonstoichiometry and defect engineering enables a novel route to manipulate the energy of the ground state of materials and the corresponding material properties.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Army Research Office (ARO)
- Grant/Contract Number:
- AC02-06CH11357; AC02-05CH11231
- OSTI ID:
- 1394834
- Alternate ID(s):
- OSTI ID: 1436637
- Journal Information:
- Chemistry of Materials, Vol. 29, Issue 15; ISSN 0897-4756
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Nonstoichiometry, structure, and properties of Ba 1−x TiO y thin films
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journal | January 2018 |
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