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Title: PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

Journal Article · · Journal of the American Chemical Society
DOI:https://doi.org/10.1021/jacs.7b04865· OSTI ID:1394440
 [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2];  [2];  [3];  [4];  [5];  [6];  [4]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [7]; ORCiD logo [2]; ORCiD logo [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Virginia, Charlottesville, VA (United States)
  4. Nayang Technologal Univ. (Singapore)
  5. Univ. of Tennessee, Knoxville, TN (United States)
  6. Univ. of Virginia, Charlottesville, VA (United States)
  7. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe2, exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from ~0 (bulk) to ~1.3 eV (monolayer). The Raman active vibrational modes of PdSe2 were identified using polarized Raman spectroscopy, and the strong interlayer interaction was revealed from the large thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe2 display tunable ambipolar charge carrier conduction with a high electron apparent field-effect mobility of ~158 cm2V-1s-1, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1394440
Journal Information:
Journal of the American Chemical Society, Vol. 139, Issue 40; ISSN 0002-7863
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 393 works
Citation information provided by
Web of Science

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A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors journal November 2019
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A high-performance near-infrared light photovoltaic detector based on a multilayered PtSe 2 /Ge heterojunction journal January 2019
Quasiparticle electronic structure and optical spectra of single-layer and bilayer PdSe 2 : Proximity and defect-induced band gap renormalization journal June 2019
The mechanical, electronic and optical properties of two-dimensional transition metal chalcogenides MX 2 and M 2 X 3 (M = Ni, Pd; X = S, Se, Te) with hexagonal and orthorhombic structures journal January 2019
Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts journal September 2019
Temperature dependence of Raman responses of few-layer PtS 2 journal October 2018
Atomically thin semiconducting penta-PdP 2 and PdAs 2 with ultrahigh carrier mobility journal January 2018
Exploring the air stability of PdSe2 via electrical transport measurements and defect calculations journal December 2019
The Computational 2D Materials Database: high-throughput modeling and discovery of atomically thin crystals journal September 2018
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors journal May 2019
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