High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

Sutter-Fella, Carolin M.; Li, Yanbo; Amani, Matin; Ager, Joel W.; Toma, Francesca M.; Yablonovitch, Eli; Sharp, Ian D.; Javey, Ali

doi:10.1021/acs.nanolett.5b04884

Title: High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

Journal Article · Mon Dec 21 00:00:00 EST 2015 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.5b04884· OSTI ID:1393011

Sutter-Fella, Carolin M. ^[1]; Li, Yanbo ^[2]; Amani, Matin ^[1]; Ager, Joel W. ^[1]; Toma, Francesca M. ^[2]; Yablonovitch, Eli ^[1]; Sharp, Ian D. ^[2]; Javey, Ali ^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH₃NH₃PbI_3-xBr_x perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ E_g ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells. (Figure Presented).

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1393011

Journal Information:: Nano Letters, Vol. 16, Issue 1; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 235 works

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X-ray Scintillation in Lead Halide Perovskite Crystals Birowosuto, M. D.; Cortecchia, D.; Drozdowski, W. arXiv https://doi.org/10.48550/arxiv.1611.05862	text	January 2016

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