Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness
- Kansas State Univ., Manhattan, KS (United States). Dept. of Chemistry
- Univ. of Kansas, Lawrence, KS (United States). Dept. of Physics and Astronomy
- Argonne National Lab. (ANL), Argonne, IL (United States). Energy Systems Division
The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- National Aeronautics and Space Administration (NASA)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1392947
- Journal Information:
- ACS Applied Materials and Interfaces, Vol. 6, Issue 24; ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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