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Title: Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness

Journal Article · · ACS Applied Materials and Interfaces
DOI:https://doi.org/10.1021/am506247w· OSTI ID:1392947
 [1];  [2];  [2];  [3];  [2];  [1]
  1. Kansas State Univ., Manhattan, KS (United States). Dept. of Chemistry
  2. Univ. of Kansas, Lawrence, KS (United States). Dept. of Physics and Astronomy
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Energy Systems Division

The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Aeronautics and Space Administration (NASA)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1392947
Journal Information:
ACS Applied Materials and Interfaces, Vol. 6, Issue 24; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 58 works
Citation information provided by
Web of Science

References (20)

Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors journal September 2011
High-Energy Density Capacitors Utilizing 0.7 BaTiO 3 -0.3 BiScO 3 Ceramics journal August 2009
Lead Lanthanum Zirconate Titanate Ceramic Thin Films for Energy Storage journal February 2013
Novel Ferroelectric Polymer Composites with High Dielectric Constants journal October 2003
Why ferroelectric polyvinylidene fluoride is special journal August 2010
Novel Ferroelectric Polymers for High Energy Density and Low Loss Dielectrics journal February 2012
Thickness-Dependent Dielectric, Ferroelectric, and Magnetodielectric Properties of BiFeO3 Thin Films Derived by Chemical Solution Deposition journal November 2011
A review on the dielectric materials for high energy-storage application journal January 2013
High energy-storage performance in Pb 0.91 La 0.09 (Ti 0.65 Zr 0.35 )O 3 relaxor ferroelectric thin films journal December 2012
Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications journal October 2010
Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45GHz microwave irradiation journal June 2008
Piezoelectric materials for high frequency medical imaging applications: A review journal February 2007
Pulsed laser deposition of perovskite relaxor ferroelectric thin films journal April 2006
Relaxor behavior of pulsed laser deposited ferroelectric (Pb1−xLax)(Zr0.65Ti0.35)O3 films journal December 1998
Enhanced dielectric nonlinearity in epitaxial Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 thin films journal April 2014
Dynamic leakage current compensation in ferroelectric thin-film capacitor structures journal April 2005
The Contribution of Electrical Conductivity, Dielectric Permittivity and Domain Switching in Ferroelectric Hysteresis Loops journal January 2011
Distinctive contributions to dielectric response of relaxor ferroelectric lead scandium niobate ceramic system: Dielectric properties of PSN ceramics journal August 2013
Voltage offsets in (Pb,La)(Zr,Ti)O 3 thin films journal January 1995
Effects of strain gradient on charge offsets and pyroelectric properties of ferroelectric thin films journal August 2006

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Ferroelectric ordering and energy storage density of thin films capacitor by doping La 3 + and Sc 3 + on Pb(Zr 0.53 Ti 0.47 )O 3 using pulse laser deposition technique journal June 2019
Flexible ultrahigh energy storage density in lead-free heterostructure thin-film capacitors journal December 2019
Stable energy density of a PMN–PST ceramic from room temperature to its Curie point based on the synergistic effect of diversified energy journal January 2019
BiFeO 3 –SrTiO 3 thin film as a new lead-free relaxor-ferroelectric capacitor with ultrahigh energy storage performance journal January 2017
High-performance BaZr 0.35 Ti 0.65 O 3 thin film capacitors with ultrahigh energy storage density and excellent thermal stability journal January 2018
High-Performance Dielectric Ceramic Films for Energy Storage Capacitors: Progress and Outlook journal August 2018
Giant energy-storage density and high efficiency achieved in (Bi 0.5 Na 0.5 )TiO 3 –Bi(Ni 0.5 Zr 0.5 )O 3 thick films with polar nanoregions journal January 2018
Interface thickness optimization of lead-free oxide multilayer capacitors for high-performance energy storage journal January 2018
Integrated Sensors in Advanced Composites: A Critical Review journal June 2019